Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 363-366

  Nishizawa, Jun Ichi ^a   Kurabayashi, Toru ^a   Kanamoto, Kyozo ^b   Yoshida, Takashi ^a   Oizumi, Toru ^a  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Gate dielectric; Plasma enhanced chemical vapor deposition; Plasma enhanced oxidation; Reaction mechanism; SiO2; Subcutaneous oxidation

Indexed keywords

CARRIER CONCENTRATION; ETCHING; IONIZATION; NANOSTRUCTURED MATERIALS; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; REDUCTION; THIN FILMS; ULTRAHIGH VACUUM;

GATE DIELECTRICS; PLASMA-ENHANCED OXYGEN (PEO); SIO2; SUBCUTANEOUS OXIDATION;

SILICA;

EID: 1642603007     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.08.020     Document Type: Conference Paper

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