Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahigh vacuum system

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 331-334

  Ohtsuka, K ^a   Yoshida, T ^a   Oizumi, T ^a   Murai, A ^a   Kurabayashi, T ^a   Nishizawa, J ^a  

^a Telecommunications Advancement Organization of Japan   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DEPOSITION; FILM GROWTH; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; THERMAL EFFECTS; THIN FILMS; VACUUM APPLICATIONS;

HELICON PLASMAS; SILICON HYDRIDES;

SEMICONDUCTING FILMS;

EID: 0034140047     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00565-5     Document Type: Article

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