Doping technology for silicon thin films grown by temperature-modulation molecular layer epitaxy

Journal of the Electrochemical Society

Volumn 149, Issue 7, 2002, Pages

  Nishizawa, Jun Ichi ^a   Kurabayashi, Toru ^a   Oizumi, Toru ^a   Murai, Akihiko ^a   Yoshida, Takashi ^a  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

MOLECULAR LAYER EPITAXY; TEMPERATURE-MODULATION (TM) METHOD;

THIN FILMS;

EID: 0036642313     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1481531     Document Type: Article

References (9)