Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

Applied Physics Letters

Volumn 72, Issue 25, 1998, Pages 3326-3328

  Sobolev, N A ^a   Gusev, O B ^a   Shek, E I ^a   Vdovin, V I ^b   Yugova, T G ^b   Emel'yanov, A M ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b Inst Chem Prob of Microlectron   (Russian Federation)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001255189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121593     Document Type: Article

References (16)

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