Precise Measurement of Ge Depth Profiles in SiGe HBT's - A Comparison of Different Methods

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 473-482

  Zaumseil, P ^a   Kruger D ^a   Kurps, R ^a   Fursenko, O ^a   Formanek, P ^a  

^a IHP   (Germany)

Author keywords

AES; Epitaxial Layer; SiGe HBT; SIMS; Spectroscopic Ellipsometry; TEM; XRD; XRR

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELLIPSOMETRY; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NONDESTRUCTIVE EXAMINATION; REFLECTOMETERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ROCKING CURVES (RC); STATISTICAL INTENSITY FLUCTUATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1642556978     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (9)

1. J.P. Dismukes, L. Ekstrom, and R.I. Paff: J. Phys. Chem. Vol. 68 (1964), p. 3021,
2. P. Zaumseil: phys. stat. sol. (a) Vol. 165 (1998), p. 195,
3. R.N. Kyutt, P.V. Petrashen, and L.M. Sorokin: phys. stat. sol. (a) Vol. 60 (1980), p. 381,
4. IHP rocking and reflectivity curve simulation software package RC_Ref_Sim,
5. J.D. Jackson: Classical Electrodynamics, Chap. 7.5 (John Wiley, San Francisco 1995)
6. S. Hofmann, J. Schubert: J. Vac. Sci. Technol. Vol. A16(3) (1998), p. 1096,
7. D.C. Joy, A.D. Roming Jr., and J.I. Goldstein: Principles of Analytical Electron Microscopy (Plenum Press, New York 1968),
8. R. Pantel, S. Jullian and D. Dutartre: Microsc. Microanal. Vol. 8 (2002), p. 1174CD
9. A. Benedetti, D.J. Norris, C.J.D. Hetherington, A.G. Cullis, D.J. Robbins and D.J. Wallis: J. Appl.Phys. Vol. 93 (2003), p. 3893