Energetics, electronic structure and local magnetism of single 3d impurity in GaAs

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 324, Issue 2-3, 2004, Pages 247-253

  Yan, Jia An ^a   Wang, Chong Yu ^a,b   Wang, Shan Ying ^a  

^a TSINGHUA UNIVERSITY   (China)

^b CCAST WORLD LABORATORY   (China)

Author keywords

71.15.Nc; 71.55.Eq; 71.70. d; 75.50.Pp; Diluted magnetic semiconductor; Electronic structure; First principles; Magnetism

Indexed keywords

CHARGE TRANSFER; CHEMICAL BONDS; CHROMIUM COMPOUNDS; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MAGNETISM; MANGANESE COMPOUNDS; SEMICONDUCTING GALLIUM;

71.15.NC; 71.55.EQ; 75.50.PP; BONDING CHARACTERISTICS; CHARGE TRANSFER PROPERTIES; FIRST PRINCIPLES; FIRST PRINCIPLES METHOD; LOCAL MAGNETIC MOMENTS;

DENSITY FUNCTIONAL THEORY;

ARSENIC; CHROMIUM; COBALT; ELEMENT; IRON; MANGANESE; NICKEL;

ARTICLE; CHEMICAL BOND; ENERGY TRANSFER; MAGNETISM; MATHEMATICAL COMPUTING;

EID: 1642528072     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.03.003     Document Type: Article

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