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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4157-4162

Edge roughness study of chemically amplified resist in low-energy electron-beam lithography using computer simulation

(7) Nakasugi, Tetsuro a Ando, Atsushi a Inanami, Ryoichi b Sasaki, Noriaki b Sugihara, Kazuyoshi a Miyoshi, Motosuke a Fujioka, Hiromu b

a TOSHIBA CORPORATION (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Chemically amplified resist; Diffusion; Electron beam; Line edge roughness; Secondary electron; Simulation

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; EDGE DETECTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; MATHEMATICAL MODELS; SENSITIVITY ANALYSIS; SURFACE ROUGHNESS;

CHEMICALLY AMPLIFIED RESISTS (CAR);

PHOTORESISTS;

EID: 0036614049 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.4157 Document Type: Article

Times cited : (10)

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