Formation of well-ordered step structures on Si(111) by a combination of chemical etching and surface scratching for producing macrosized patterns

Journal of Physical Chemistry B

Volumn 108, Issue 1, 2004, Pages 21-23

  Imanishi, A ^a   Nagai, T ^a   Nakato, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULES; PHOTOLITHOGRAPHY; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON WAFERS; SURFACE TREATMENT;

NANOWIRES; SURFACE SCRATCHING; SURFACE-PROBE MICROSCOPES; WELL-ORDERED STEP STRUCTURES;

ETCHING;

EID: 1642461318     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp036804t     Document Type: Letter

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