Dynamic repulsion of surface steps during step flow etching: Controlling surface roughness with chemistry

Journal of Chemical Physics

Volumn 109, Issue 12, 1998, Pages 5025-5035

  Huang, Yi Chiau ^a   Flidr, Jaroslav ^b   Newton, Theresa A ^c   Hines, Melissa A ^c  

^a Cornell University   (United States)

^b Department of Obstetrics Gynecology   (United States)

^c Department of Molecular Biology and Genetics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ETCHING; MATHEMATICAL MODELS; MONTE CARLO METHODS; MORPHOLOGY; NUMERICAL ANALYSIS; SILICON; SURFACE ROUGHNESS;

DYNAMIC REPULSION; STEP FLOW ETCHING;

MOLECULAR DYNAMICS;

EID: 0032558364     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.477115     Document Type: Article

References (25)

1. H. C. Gatos and M. C. Lavine, in Progress in Semiconductors, edited by A. F. Gibson and R. E. Burgess (Temple Press, London, 1965), Vol. 9, p. 3.
2. B. W. Batterman, J. Appl. Phys. 28, 1236 (1957).
3. R. C. Ellis, Jr., J. Appl. Phys. 25, 1497 (1954).
4. J. M. West, Basic Corrosion and Oxidation, 2nd ed. (Wiley, New York, 1986), Chap. 1.
5. For a review, see R. B. Heimann in Silicon Chemical Etching, edited by J. Grabmaier (Springer-Verlag, Berlin, 1982), p. 173.
6. W. Franke, R. Heimann, and R. Lacmann, J. Cryst. Growth 28, 145 (1975). See Fig. 11 in particular.
7. J. Flidr, Y.-C. Huang, T. A. Newton, and M. A. Hines, J. Chem. Phys. 108, 5542 (1998).
8. Y.-C. Huang, J. Flidr, T. A. Newton, and M. A. Hines, Phys. Rev. Lett. 80, 4462 (1998).
9. See, for example, A.-L. Barabási and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University Press, Cambridge, 1995). Although this book deals primarily with growth processes, many of the results are equally applicable to etching (with the appropriate sign changes).
10. E. E. Gruber and W. W. Mullins, J. Phys. Chem. Solids 28, 875 (1967).
11. M. E. Fisher and D. S. Fisher, Phys. Rev. B 25, 3192 (1982);
12. N. C. Bartelt, T. L. Einstein, and E. D. Williams, Surf. Sci. 240, L591 (1990).
13. For a direct comparison of these two calculations, see Fig. 2 in B. Joos, T. L. Einstein, and N. C. Bartelt, Phys. Rev. B 43, 8153 (1991).
14. See K. Sangwal, Etching of Crystals (North-Holland, Amsterdam, 1987), Chap. 7, and references therein.
15. X.-P. Li and D. Vanderbilt, Phys. Rev. Lett. 69, 2543 (1992).
16. In one dimension, we refer to the sites that terminate steps as "ledge" sites instead of "kink" sites to avoid confusion with the two-dimensional case, where a kink site occurs at the intersection of two steps.
17. But not the worst! Some systems, such as water pipes, are susceptible to pinhole etching. These pinholes can bore through a relatively thick wall, with disastrous consequences, even though the areas adjacent to the pinholes are often relatively smooth. Pinhole etching lies outside of the scope of this study, but is discussed in Ref. 4.
18. Simulations of this type of etching/growth are presented in Chap. 4 of Ref. 9.
19. P. Jakob and Y. J. Chabal, J. Chem. Phys. 95, 2897 (1991).
20. P. Bennema and G. H. Gilmer, in Crystal Growth: An Introduction, edited by P. Hartman (North-Holland, Amsterdam, 1973), p. 263.
21. Because collisions only affect the motion of the trailing step, the velocity of a given step is only affected by a collision with the preceding step. The probability of this collision is determined by the width of the preceding terrace.
22. See reference 8 and H. E. Hessel, A. Feltz, M. Reiter, U. Memmert, and R. J. Behm, Chem. Phys. Lett. 186, 275 (1991);
23. G. J. Pietsch, U. Köhler, and M. Henzler, 197, 346 (1992).
24. See D. Kandel and J. D. Weeks, Phys. Rev. B 49, 5554 (1994), and references therein.
25. F. C. Frank, in Growth and Perfection of Crystals, edited by R. H. Doremus, B. W. Roberts, and D. Turnbull (Wiley, New York, 1958), p. 411.