Dependence of pattern printability on thicknesses of absorber and cap layers of Mo/Si mask blank for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 1046-1054

  Sugawara, Minora ^a   Chiba, Akira ^a   Yamanashi, Hiromasa ^a   Nishiyama, Iwao ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Cap layer; Multiple interference; Optical density; Reflectance

Indexed keywords

ALGORITHMS; DENSITY (OPTICAL); DIFFRACTION; FINITE DIFFERENCE METHOD; LIGHT ABSORPTION; LIGHT INTERFERENCE; LIGHT REFLECTION; LIGHTING; MAXWELL EQUATIONS; OPTICAL DESIGN; PHOTOLITHOGRAPHY; RUTHENIUM; SUBSTRATES; TANTALUM COMPOUNDS; THICKNESS MEASUREMENT; ULTRAVIOLET RADIATION;

CAP LAYERS; MULTIPLE REFLECTANCE;

MASKS;

EID: 1642432998     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504376     Document Type: Conference Paper

References (9)

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