Successful shape-preservation of Ge-clusters during Si-coverage at low temperature

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 142-145

  Muller E ^a   Kirfel, O ^a   Rastelli, A ^b   Von Kanel H ^c   Grutzmacher D ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b UNIVERSITY OF PAVIA   (Italy)

^c ETH ZURICH   (Switzerland)

Author keywords

Ge dome clusters; Ge dots; Overgrowth; Shape preservation; Silicon; Transmission electron microscopy

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GE DOME-CLUSTERS; OVERGROWTH; SHAPE PRESERVATION;

GERMANIUM;

EID: 1642374601     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00684-0     Document Type: Conference Paper

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