Thickness dependent soft-breakdown phenomena of low dielectric constant thin films and corresponding activation energy

Microelectronics Journal

Volumn 33, Issue 8, 2002, Pages 605-608

  Lee, Shih Wei ^a   Kim, Hyungkun ^a   Shi, Frank G ^a   Zhao, Bin ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

Activation energy; Low dielectric constant; Soft breakdown; Thickness dependent

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ELECTRIC BREAKDOWN; ETHYLENE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; PERMITTIVITY; POLYMERS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

LOW DIELECTRIC CONSTANT; SOFT-BREAKDOWN; THICKNESS DEPENDENT;

THIN FILMS;

EID: 1642348707     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00036-8     Document Type: Article

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