Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al 0.33Ga0.67As heterostructure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 872-875

  Reuter, D ^a   Seekamp, A ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Focused ion beam implantation; Implantation doping; In plane gate transistor

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; ION BEAMS; ION IMPLANTATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

FOCUSED ION BEAM (FIB) IMPLANTATION; IMPLANTATION DOPING; IN-PLANE GATE TRANSISTORS;

TRANSISTORS;

EID: 1642291249     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.141     Document Type: Conference Paper

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