Metastable group II sulphides grown by MBE: Surface morphology and crystal structure

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 141-149

  Prior, K A ^a   Bradford, C ^a   David, L ^a   Tang, X ^b   Cavenett, B C ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b CNRS   (France)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Sulfides; B2. Semiconducting II VI materials

Indexed keywords

CRACK PROPAGATION; CRYSTAL STRUCTURE; INTERFACIAL ENERGY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING SILICON; STRAIN RATE; TEMPERATURE DISTRIBUTION; TENSILE STRESS; THICKNESS MEASUREMENT;

LOW-DIAMENSIONAL STRUCTURES; METASTABLE LAYERS; SEMICONDUCTING II-IV MATERIALS; SURFACE RIDGES;

SULFIDE MINERALS;

EID: 15944426352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.078     Document Type: Conference Paper

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