Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 849-855

  Marschner, T ^a   Tichelaar, F D ^b   Leys, M R ^a   Rongen, R T H ^a   Verschuren, C A ^a   Vonk, H ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 15944416884     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00124-3     Document Type: Article

References (15)

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