Strain release in InGaAs/InxAl1-xAs/InP heterostructures

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1082-1085

  Yastrubchak, O ^a   Bak Misiuk, J ^a   Lusakowska E ^a   Kaniewski, J ^b   Domagala, J Z ^a   Wosinski T ^a   Shalimov, A ^a   Reginski K ^b   Kudla, A ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Misfit dislocations; Semiconductor heterostructures; Strain relaxation

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; COMPOSITION; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LATTICE CONSTANTS; MICROCRACKS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS; STRAIN; X RAY DIFFRACTION ANALYSIS;

ANISOTROPIC RELAXATION; STRAIN RELAXATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0346055254     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.183     Document Type: Conference Paper

References (8)

1. Lim Y.S., Lee J.Y., Kim T.W. J. Crystal Growth. 200:1999;421.
2. Romanov A.E., Speck J.S. J. Electron. Mater. 29:2000;901.
3. Andrews A.M., Speck J.S., Romanov A.E., Bobeth M., Pompe W. J. Appl. Phys. 91:2002;1933.
4. Kavanagh K.L., Capano M.A., Hobbs L.W., Barbour J.C., Marée P.M.J., Schaff W., Mayer J.W., Pettit D., Woodall J.M., Stroscio J.A., Feenstra R.M. Appl. Phys. 64:1988;2798.
5. Salviati G., Ferrari C., Lazzarini L., Nasi L., Drigo A.V., Berti M., De Salvador D., Natali M., Mazzer M. Appl. Surf. Sci. 188:2002;36.
6. Cullis A., Pidduck A.J., Emeny T. Phys. Rev. Lett. 75:1995;2368.
7. O. Yastrubchak, T. Wosiński, T. Figielski, E. L*usakowska, B. Pecz, A.L. Tóch, Physica E 17 (2003) 561.
8. Dong L., Schnitker J., Smitch R.W., Smolovitz D.J. J. Appl. Phys. 83:1998;217.