Solid-phase epitaxial growth of bulk SiC single crystals

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 143-146

  Pernot, E ^a   Anikin, M ^a   Pons, M ^b   Chaix Pluchery, O ^a   Baillet, F ^b   Matko, I ^a   Madar, R ^a  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

SiC bulk growth; Solid phase epitaxy; Synchrotron topography

Indexed keywords

EPITAXIAL GROWTH; OPTICAL MICROSCOPY; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SILICON WAFERS; SYNCHROTRONS; THICKNESS MEASUREMENT; TOPOGRAPHY;

BULK GROWTH; SOLID-PHASE EPITAXY; SYNCHROTRON TOPOGRAPHY; WHITE BEAMS; PROGRESSIVE ALIGNMENT; SIC SINGLE CRYSTALS; SOLID PHASE EPITAXIAL GROWTH; SOLID PHASE EPITAXY; SOLID TRANSFORMATION; X-RAY SYNCHROTRON;

SINGLE CRYSTALS;

EID: 12444309529     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.143     Document Type: Article

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