Full encapsulation by molten salts during the Bridgman growth process

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 356-362

  Duffar, T ^a   Gourbil, J M ^a   Boiton, P ^a   Dusserre, P ^a   Eustathopoulos, N ^b  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Bridgman growth; Encapsulation

Indexed keywords

BORON COMPOUNDS; DISLOCATIONS (CRYSTALS); ENCAPSULATION; INTERFACIAL ENERGY; LITHIUM COMPOUNDS; MELTING; MOLTEN MATERIALS; NUCLEATION; POTASSIUM COMPOUNDS; SALTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

BRIDGMAN GROWTH PROCESS; LITHIUM CHLORIDE;

CRYSTAL GROWTH;

EID: 0031209676     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00145-0     Document Type: Article

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