SCOPUS 정보 검색 플랫폼

Volumn 275, Issue 1-2, 2005, Pages

Structural instabilities in growth of SiC crystals

(4) Ciechonski, R R a Syvajarvi M a Ul Hassan, J a Yakimova, R a

Author keywords

A1. Crystal morphology; A1. Volume defects; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconductor silicon compounds

Indexed keywords

CRYSTAL ORIENTATION; ETCHING; LIGHT TRANSMISSION; MOLTEN MATERIALS; OPTICAL MICROSCOPY; POTASSIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS;

CRYSTAL MORPHOLOGY; GROWTH FROM VAPOR; MISORIENTED GRAINS; SINGLE CRYSTAL GROWTH; VOLUME DEFECTS;

CRYSTAL GROWTH;

EID: 15844421238 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.020 Document Type: Conference Paper

Times cited : (8)

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