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Volumn 244, Issue 1-4, 2005, Pages 257-263

Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces

Author keywords

AlGaN; Cathodoluminescence; GaN; Interface states; Schottky barriers; SiC

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CATHODOLUMINESCENCE; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; STRUCTURE (COMPOSITION);

EID: 15844407972     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.172     Document Type: Conference Paper
Times cited : (2)

References (14)
  • 13
    • 15844379438 scopus 로고    scopus 로고
    • S. Tumakha, L.J. Brillson, R.J. Okojie unpublished
    • S. Tumakha, L.J. Brillson, R.J. Okojie unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.