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Volumn 244, Issue 1-4, 2005, Pages 257-263
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Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces
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Author keywords
AlGaN; Cathodoluminescence; GaN; Interface states; Schottky barriers; SiC
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Indexed keywords
ALUMINUM COMPOUNDS;
CARRIER CONCENTRATION;
CATHODOLUMINESCENCE;
ELECTRONIC STRUCTURE;
GALLIUM NITRIDE;
SEMICONDUCTOR MATERIALS;
SILICON CARBIDE;
SPECTROSCOPIC ANALYSIS;
STRUCTURE (COMPOSITION);
ALGAN;
GAN;
INTERFACE STATES;
SCHOTTKY BARRIERS;
SIC;
HETEROJUNCTIONS;
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EID: 15844407972
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.09.172 Document Type: Conference Paper |
Times cited : (2)
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References (14)
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