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Volumn 275, Issue 1-2, 2005, Pages
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Drift-induced step instabilities due to the gap in the diffusion coefficient
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Author keywords
A1. Computer simulation; A1. Morphological stability; B2. Semiconducting silicon
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Indexed keywords
ANISOTROPY;
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
EVAPORATION;
MONTE CARLO METHODS;
SEMICONDUCTING SILICON;
SOLIDIFICATION;
SUPERCONDUCTING TRANSITION TEMPERATURE;
VECTORS;
DIFFUSION COEFFICIENTS;
MORPHOLOGICAL STABILITY;
STABILITY ANALYSIS;
STRUCTURAL TRANSITION TEMPERATURE;
DIFFUSION;
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EID: 15844375496
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.060 Document Type: Conference Paper |
Times cited : (4)
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References (20)
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