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Volumn 550, Issue 1-3, 2004, Pages 149-165

Step wandering due to the structural difference of the upper and the lower terraces

Author keywords

Adatoms; Monte Carlo simulations; Silicon; Surface diffusion; Surface structure, morphology, roughness, and topography; Vicinal single crystal surfaces

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; EVAPORATION; MONTE CARLO METHODS; MORPHOLOGY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SINGLE CRYSTALS; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY;

EID: 0942278032     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.12.012     Document Type: Article
Times cited : (11)

References (25)
  • 2
    • 0029208905 scopus 로고    scopus 로고
    • Uwaha M., Saito Y., Sato M. J. Cryst. Growth. 146:1995;164 Uwaha M., Sato M. Surf. Rev. Lett. 5:1998;841 Uwaha M. Sato K., Nakajima K., Furukawa Y. Fundamentals and Applications of Crystal Growth Research and Technology. 2001;78 Elsevier, Amsterdam.
    • (1995) J. Cryst. Growth , vol.146 , pp. 164
    • Uwaha, M.1    Saito, Y.2    Sato, M.3
  • 3
    • 0038035166 scopus 로고    scopus 로고
    • Uwaha M., Saito Y., Sato M. J. Cryst. Growth. 146:1995;164 Uwaha M., Sato M. Surf. Rev. Lett. 5:1998;841 Uwaha M. Sato K., Nakajima K., Furukawa Y. Fundamentals and Applications of Crystal Growth Research and Technology. 2001;78 Elsevier, Amsterdam.
    • (1998) Surf. Rev. Lett. , vol.5 , pp. 841
    • Uwaha, M.1    Sato, M.2
  • 4
    • 0029208905 scopus 로고    scopus 로고
    • K. Sato, K. Nakajima, & Y. Furukawa. Amsterdam: Elsevier
    • Uwaha M., Saito Y., Sato M. J. Cryst. Growth. 146:1995;164 Uwaha M., Sato M. Surf. Rev. Lett. 5:1998;841 Uwaha M. Sato K., Nakajima K., Furukawa Y. Fundamentals and Applications of Crystal Growth Research and Technology. 2001;78 Elsevier, Amsterdam.
    • (2001) Fundamentals and Applications of Crystal Growth Research and Technology , pp. 78
    • Uwaha, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.