Step wandering due to the gap in diffusion coefficient on the upper and the lower terraces

Surface Science

Volumn 522, Issue 1-3, 2003, Pages 64-74

  Kato, R ^a   Uwaha, M ^a   Saito, Y ^b   Hibino, H ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Growth; Monte Carlo simulations; Silicon; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DIFFUSION; EVAPORATION; MONTE CARLO METHODS; MORPHOLOGY; SILICON; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE ROUGHNESS;

SURFACE DIFFUSION;

CRYSTAL STRUCTURE;

EID: 0037211336     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02314-2     Document Type: Article

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