Co2MnX (XSi, Ge, Sn, SbSn) thin films grown by pulsed-laser deposition

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Grigorescu, C ^a   Valerio, E ^b   Tortet, L ^c   Notonier, R ^d   Trodahl, H J ^e   Kennedy, V J ^f   Markwitz, A ^f   Manea, S A ^g   Autric, M ^b  

^a NATIONAL INSTITUTE FOR OPTOELECTRONICS   (Romania)

^b University of Mediterranean   (France)

^c AIX MARSEILLE UNIVERSITY   (France)

^d VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^e AIX MARSEILLE UNIVERSITY   (France)

^f GNS SCIENCE   (New Zealand)

^g NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

A3. Physical vapour deposition processes; B1. Heusler alloys; B1. Metals; B2. Magnetic materials

Indexed keywords

ABSORPTION; COBALT COMPOUNDS; ENERGY DISPERSIVE SPECTROSCOPY; EXCIMER LASERS; MAGNETIC MATERIALS; METALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

HEUSLER ALLOYS; INTERDIFFUSION; PHYSICAL VAPOR DEPOSITION PROCESSES; VALENCE-TO-CONDUCTION TRANSITIONS;

THIN FILMS;

EID: 15844372615     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.208     Document Type: Conference Paper

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