Lowering of thickness of boron-doped microcrystalline hydrogenated silicon film by seeding technique

Solar Energy Materials and Solar Cells

Volumn 86, Issue 3, 2005, Pages 365-371

  Sarker, Arindam ^a   Banerjee, Chandan ^a   Barua, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Microcrystallinity; Raman spectroscopy; Seed layer; Transmission electron microscopy (TEM); Tunnel junction

Indexed keywords

BORON; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

MICROCRYSTALLINITY; RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RF-PECVD); SEED LAYERS; ULTRATHIN SEED LAYERS;

THIN FILMS;

EID: 15744396854     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2004.08.005     Document Type: Article

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