Lowering of thickness of n-type microcrystalline hydrogenated silicon film by seeding technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 9 A/B, 1999, Pages

  Barua, Asok K ^a   Mandal, Sankar ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM PREPARATION; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SOLAR CELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS; ULTRATHIN FILMS;

DARK CONDUCTIVITY; MICROCRYSTALLINITY; MULTIJUNCTION SOLAR CELLS; RADIO FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RFPECVD); SEEDING TECHNIQUES;

SEMICONDUCTING FILMS;

EID: 0033340108     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l981     Document Type: Article

References (3)

1. S. Ray, A. Dasgupta and A. K. Barua: 25th IEEE PVSC, Washington DC, 1996, p. 1121.
2. R. R. Arya, M. Benett, L. Yang, J. Newton, Y. M. Li, N. Maley and B. Fieselmann: Int. PVSC-7, Nagoya, 1993, p. 41.
3. S. Guha, J. Yang, A. Banerjee, T. Glatfelter, K. Hoffman and X. Xue: Int. PVSC-7, Nagoya, 1993, p. 43.