The growth of crystallinity in undoped SiO:H films at low RF-power density and substrate temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 2 A, 2001, Pages

  Sarker, A ^a   Bandyopadhyay, A K ^a   Barua, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Hydrogen dilution; Hydrogenated silicon oxide film; Microcrystallinity; rf power density

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CURRENT DENSITY; GRAIN SIZE AND SHAPE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MICROCRYSTALLINITY;

SEMICONDUCTING FILMS;

EID: 0035246998     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.L94     Document Type: Article

References (4)