High fluence effects on ion implantation stopping and range

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 229, Issue 1, 2005, Pages 60-64

  Selvi, S ^a   Tek, Z ^b   Oztarhan A ^c   Akbas N ^b   Brown, I G ^d  

^a EGE UNIVERSITY   (Turkey)

^b CELAL BAYAR UNIVERSITY   (Turkey)

^c EGE UNIVERSITY   (Turkey)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

High dose implantation; Implantation codes; Ion implantation; Nuclear and electronic stopping powers

Indexed keywords

APPROXIMATION THEORY; BERYLLIUM; HEAVY IONS; IONIZATION; MONTE CARLO METHODS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING;

ATOMIC NUMBER; HIGH DOSE IMPLANTATION; IMPLANTATION CODES; THOMAS-FERMI SCREENING FUNCTION;

ION IMPLANTATION;

EID: 15744386957     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.11.015     Document Type: Article

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