High quality a-Si:H films for MIS device applications

Thin Solid Films

Volumn 403, Issue 404, 2002, Pages 26-29

  AAguas H ^a   Fortunato, E ^a   Silva, V ^a   Pereira, L ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Amorphous silicon; MIS; Oxidation

Indexed keywords

AMORPHOUS SILICON; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELLIPSOMETRY; METAL INSULATOR BOUNDARIES; OXIDATION; PHOTODIODES; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO; SPECTROSCOPIC ANALYSIS;

METAL INSULATOR SEMICONDUCTOR (MIS) DEVICES;

SEMICONDUCTING FILMS;

EID: 15744375197     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01655-8     Document Type: Article

References (15)

1. Properties of amorphous silicon and its alloys
2. Influence of a dc grid on silane rf plasma properties
3. Influence of the plasma regime on the structural, optical, electrical and morphological properties of a-Si:H thin films
4. Role of the i layer surface properties on the performance of a-Si:H Schottky Barrier photodiodes