Rapid and uniform SiO2 film growth on 4 inch si wafer using 100%-O3 gas

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 118-124

  Nishiguchi, Tetsuya ^a,b   Sato, Yosuke ^a,c   Nonaka, Hidehiko ^a   Ichimura, Shingo ^a   Noyori, Takeshi ^b   Morikawa, Yoshiki ^b   Kekura, Mitsuru ^b   Nihei, Yoshimasa ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIDENSHA CORPORATION   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Boundary layer; Concentration; Lifetime; Oxidation; Oxygen atom; Ozone; Uniform

Indexed keywords

BOUNDARY LAYERS; CONCENTRATION (PROCESS); DECOMPOSITION; FILM GROWTH; OXIDATION; OZONE; SILICON COMPOUNDS; ULSI CIRCUITS;

LIFETIME; OXYGEN ATOMS; THERMAL BOUNDARY LAYERS; UNIFORM;

SILICON WAFERS;

EID: 15544373300     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.118     Document Type: Article

References (27)

1. A. Kazor, R. Gwilliam and I. W. Boyd: Appl. Phys. Lett. 65 (1994) 412.
2. Z. Cui, J. M. Madsen and C. G. Takoudis: J. Appl. Phys. 87 (2000) 8181.
3. A. Teramoto, K. Kobayashi, Y. Ohno and M. Hirayama: Jpn. J. Appl. Phys. 37 (1998) 1122.
4. N. Kaliwoh, J.-Y. Zhang and I. W. Boyd: Appl. Surf. Sci. 168 (2000) 288.
5. D. F. Lai, J. Roberson and W. I. Milne: Thin Solid Films 383 (2001) 220.
6. K. Sekine, Y. Saito, M. Hirayama and T. Ohmi: IEEE Trans. Electron Devices 48 (2001) 1550.
7. Q. Fang, J.-Y. Zhang and I. W. Boyd: Appl. Surf. Sci. 208-209 (2003) 369.
8. S. W. Benson and A. E. Axworthy: J. Chem. Phys. 26 (1957) 1718.
9. S. W. Benson and A. E. Axworthy: J. Chem. Phys. 42 (1965) 2614.
10. T. Nishiguehi, Y. Morikawa, M. Kekura, M. Miyamoto, H. Nonaka and S. Ichimura: Rev. Sci. Instrum. 73 (2002) 1217.
11. T. Nishiguehi, H. Nonaka, S. Ichimura, Y. Morikawa, M. Kekura and M. Miyamoto: Appl. Phys. Lett. 81 (2002) 2190.
12. S. Ichimura, H. Nonaka, Y. Morikawa, T. Noyori, T. Nishiguehi and M. Kekura: J. Vac. Sci. Technol. A 22 (2004) 1410.
13. M. Harvath, L. Bilitzky and J. Huttner: Ozone (Akademiai Kiado, Budapest, 1985) p. 217.
14. R. Brabets, D. Clark and A. Snelson: J. Fluorine Chem. 41 (1988) 311.
15. T. Nishiguehi, Y. Morikawa, M. Kekura, M. Miyamoto, H. Nonaka and S. Ichimura: Proc. 1st Int. Conf. Semiconductor Technology, ed. M. Yang (Electrochemical Society, New Jersey, 2001) Vol. 1, p. 625.
16. H. Eto, K. Kamo and H. Takahashi: Tosoh Res. & Technol. 46 (2002) 45 [in Japanese].
17. Y. Sato, T. Nishiguchi, H. Nonaka, S. Ichimura and Y. Nihei: submitted to Sinku (Vacuum) [in Japanese].
18. H. Nonaka, T. Nishiguchi and S. Ichimura: Rev. Sci. Instrum. A 22 (2004) 1410.
19. R. W. Keyes: IBM J. 7 (1963) 334.
20. B. E. Deal and A. S. Grove: J. Appl. Phys. 36 (1965) 3770.
21. L. N. Lie, R. R. Razouk and B. E. Deal: J. Electrochem. Soc. 129 (1982) 2828.
22. M. Uematsu, H. Kageshima and K. Shiraishi: J. Appl. Phys. 89 (2001) 1948.
23. I. Kamioka and K. Kurihara: Jpn. J. Appl. Phys. 42 (2003) L1472.
24. H. Schlichting: Boundary Layer Theory (Mcgraw Hill, New York, 1979) 7th ed.
25. R. H. Hughes: J. Chem. Phys. 21 (1953) 959.
26. H. Komiyama: Sokudoron (Rate Processes) (Asakurashoten, Tokyo, 1993) p. 59 [in Japanese].
27. L. S. Tong: Nucl. Eng. & Des. 21 (1972) 1.