A deep submicrometer CMOS process compatible high-Q air-gap solenoid inductor with laterally laid structure

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 160-162

  Lin, C S ^a   Fang, Y K ^a   Chen, S F ^a   Lin, C Y ^a   Hsieh, M C ^a   Lai, C M ^a   Chou, T H ^a   Chen, C H ^b  

^a Institute of Microelectronics   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Air gap; Falling altitude; Inductors; Quality factor; Solenoid

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC INDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SOLENOIDS; STRENGTH OF MATERIALS;

AIR GAP; FALLING ALTITUDE; QUALITY FACTOR; SOLENOID INDUCTOR; SUBMICROMETER CMOS;

CMOS INTEGRATED CIRCUITS;

EID: 15544372973     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.843213     Document Type: Article

References (12)

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