A deep submicron CMOS process compatible suspending high-Q inductor

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 522-523

  Chen, Chung Hui ^a   Fang, Yean Kuen ^a   Yang, Chih Wei ^a   Tang, C S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Air gap; Inductors; Pillars; RF CMOS; Suspending

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE;

AIR GAP; ON CHIP INDUCTORS; PILLARS; SUSPENDING INDUCTOR;

ELECTRIC INDUCTORS;

EID: 0035506268     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962650     Document Type: Article

References (5)

1. A novel air gap integration scheme for multi-level interconnects using self-aligned via plugs
2. Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's
3. High Q inductors for wireless applications in a complementary silicon bipolar process
4. The detailed analysis of high CMOS-compatible microwave spiral inductors in silicon technology
5. Large suspended inductor on silicon and their use in a 2-μm CMOS RF amplifier