1530V, 16.8mΩ·cm2, 4H-SiC normally-off vertical junction field-effect transistor

Electronics Letters

Volumn 40, Issue 4, 2004, Pages 270-271

  Fursin, L G ^a   Zhao, J H ^b   Weiner, M ^a  

^a UNITED SILICON CARBIDE INC   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FABRICATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SPUTTERING;

JUNCTION TERMINATION EXTENSION (JTE); VERTICAL JUNCTION FIELD EFFECT TRANSISTOR (VJFET);

FIELD EFFECT TRANSISTORS;

EID: 1542712451     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040165     Document Type: Article

References (11)

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