Demonstration of a high performance 4H-SiC vertical junction field effect transistor without epitaxial regrowth

Electronics Letters

Volumn 39, Issue 3, 2003, Pages 321-323

  Zhao, J H ^a   Tone, K ^a   Zhang, J ^a   Alexandrov, P ^a   Fursin, L ^a   Weiner, M ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DOPING;

JUNCTION GATES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0037421806     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030178     Document Type: Article

References (10)

1. Materials Science Forum, 2002, Vols. 389-393A, S. YOSHIDA, S. NISHINO, H. HARIMA, and T. KIMOTO (Eds), Uetikon-Zurich, Switzerland: Trans Tech
2. COPPER, J.A., Jr., MELLOCH, M.R., SINGH, R., AGARWAL, A., and PALMOUR, J.W.: 'Status and prospects for SiC power MOSFETs', IEEE Trans. Electron Devices, 2002, 49, pp. 658-663
3. ZHAO, J.H., LI, X., TONE, K., ALEXANDROV, P., PAN, M., and WEINER, M: 'A novel high-voltage normally-off 4H-SiC vertical JFET', Mater. Sci. Forum, 2002, 389-393, pp. 1223-1226
4. GUPTA, R.N., CHANG, H.R., HANNA, E., and BUI, C.: 'A 600 V SiC trench JFET', Mater. Sci. Forum, 2002, 389-393, pp. 1219-1222
5. ONOSE, H., WATANABE, A., SOMEYA, T., and KOBAYASHI, Y.: '2 kV 4H-SiC junction FETs', Mater Sci. Forum, 2002, 389-393, pp. 1227-1230
6. FRIEDRICHS, P., MITLEHNER, H., SCHÖRNER, R., DOHNKE, K.-O., ELPELT, R., and STEPHANI, D.: 'Application-oriented unipolar switching SiC devices', Mater Sci. Forum, 2002, 389-393, pp. 1185-1190
7. 2'. Proc. ISPSD, Santa Fe, NM, USA, 2002, pp. 61-64
8. LI, X., TONE, K., CAO, L.H., ALEXANDROV, P., FURSIN, L., and ZHAO, J.H.: 'Theoretical and experimental study of 4H-SiC junction edge termination', Mater Sci. Forum, 2000, 338-342, p. 1375
9. KONSTANTINOV, A., NORDELL, N., WAHAB, Q., and LINDEFELT, U.: 'Temperature dependence of avalanche breakdown for epitaxial diodes in 4H-SiC', Appl. Phys. Lett., 1998, 73, (13), pp. 1850-1852
10. RAGHUNATHAN, R., and BALIGA, B.J.: 'Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC', Solid-State Electron., 1999, 43, pp. 199-211