Integrating thick copper/Black Diamond™ layer in CMOS interconnect process for RF passive components

Microelectronics Reliability

Volumn 44, Issue 4, 2004, Pages 581-585

  Lihui, Guo ^a   Yibin, Zhang ^a   Jeffrey, Su Yong Jie ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHIP SCALE PACKAGES; COPPER; CRACKS; DIELECTRIC FILMS; ELECTRIC INDUCTORS; ETCHING; METALLIZING; NATURAL FREQUENCIES; RESIDUAL STRESSES; TENSILE STRESS;

BLACK DIAMOND; INTERCONNECT PROCESS;

CMOS INTEGRATED CIRCUITS;

EID: 1542610644     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.12.006     Document Type: Article

References (12)

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