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Volumn 12, Issue 7, 2000, Pages 879-881

Optical mixing with difference frequencies to 552 GHz in ultrafast high electron mobility transistors

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; MILLIMETER WAVES; NONLINEAR OPTICS; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL PROCESSING; SIGNAL TO NOISE RATIO;

EID: 0034228165     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.853534     Document Type: Article
Times cited : (17)

References (10)
  • 2
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    • Multi-functional fiber-optic microwave links
    • U. Gliese, "Multi-functional fiber-optic microwave links," Opt. Quant. Electron., vol. 30, no. 11-12, pp. 1005-1019, 1998.
    • (1998) Opt. Quant. Electron. , vol.30 , Issue.11-12 , pp. 1005-1019
    • Gliese, U.1
  • 3
    • 0032225874 scopus 로고    scopus 로고
    • Demonstration of the ultrafast response of 50-nm gate HEMT's using cw optical mixing techniques
    • M. E. Ali, D. Bhattacharya, H. Erlig, H. R. Fetterman, and M. Matloubian, "Demonstration of the ultrafast response of 50-nm gate HEMT's using cw optical mixing techniques," Proc. SPIE, vol. 3277, pp. 179-186, 1998.
    • (1998) Proc. SPIE , vol.3277 , pp. 179-186
    • Ali, M.E.1    Bhattacharya, D.2    Erlig, H.3    Fetterman, H.R.4    Matloubian, M.5
  • 4
    • 0026928118 scopus 로고
    • 50-nm self-aligned-gate pseudomorphic AIInAs/GaInAs high electron mobility transistors
    • Sept.
    • L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, "50-nm self-aligned-gate pseudomorphic AIInAs/GaInAs high electron mobility transistors," IEEE Trans. Electron Devices, vol. 39, pp. 2007-2014, Sept. 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 2007-2014
    • Nguyen, L.D.1    Brown, A.S.2    Thompson, M.A.3    Jelloian, L.M.4
  • 5
    • 0028546977 scopus 로고
    • Heterodyne reception of millimeter-wave modulated optical signals with an InP based transistor
    • Nov.
    • C. Rauscher and K. J. Williams, "Heterodyne reception of millimeter-wave modulated optical signals with an InP based transistor," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 2027-2034, Nov. 1994.
    • (1994) IEEE Trans. Microwave Theory Tech. , vol.42 , pp. 2027-2034
    • Rauscher, C.1    Williams, K.J.2
  • 8
    • 0030397356 scopus 로고    scopus 로고
    • An analytical model for the photodetection mechanisms in high-electron mobility transistors
    • Dec.
    • M. A. Romero, M. A. G. Martinez, and P. R. Herczfeld, "An analytical model for the photodetection mechanisms in high-electron mobility transistors," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2279-2287, Dec. 1996.
    • (1996) IEEE Trans. Microwave Theory Tech. , vol.44 , pp. 2279-2287
    • Romero, M.A.1    Martinez, M.A.G.2    Herczfeld, P.R.3
  • 9
    • 0033331585 scopus 로고    scopus 로고
    • Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
    • Dec.
    • Y. Takanashi, K. Takahata, and Y. Muramoto, "Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light," IEEE Trans. Electron Devices, vol. 46, pp. 2271-2277, Dec. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 2271-2277
    • Takanashi, Y.1    Takahata, K.2    Muramoto, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.