High-frequency response of metal-semiconductor-metal photodetectors limited by dynamic and recombination effects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6352-6357

  Khmyrova, Irina ^a   Ryzhii, Victor ^a   Ryzhii, Maxim ^a,b   Willander, Magnus ^b  

^a UNIVERSITY OF AIZU   (Japan)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Frequency response; Lifetime; Metal semiconductor metal photodetector; Saturation velocity; Schottky contact; Velocity overshoot

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; MONTE CARLO METHODS; PHOTODIODES; PHOTOELECTRICITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR METAL BOUNDARIES;

CARRIER RECOMBINATION; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; SCHOTTKY CONTACTS;

PHOTODETECTORS;

EID: 0032304775     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6352     Document Type: Article

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