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Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1888-1894

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

(5) Kurtz, S R a Allerman, A A a Koleske, D D a Baca, A G a Briggs, R D a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON GAS; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; ELECTROREFLECTANCE TECHNIQUE; FRANZ KELDYSH OSCILLATION; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 1542336953 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1639955 Document Type: Article

Times cited : (14)

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