Characteristics of low-temperature-processed a-Si TFT for plastic substrates

IEICE Transactions on Electronics

Volumn E83-C, Issue 10, 2000, Pages 1584-1587

  Ikeda, Mitsushi ^a   Mizutani, Yoshihisa ^a   Ashida, Sumio ^a   Yamada, Keisaku ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

A si tft; Low temperature process; Mobile devices; Plastic substrates

Indexed keywords

EID: 1542330370     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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2. H. Gleskova, S. Wagner, and Z. Suo, "a-Si: H TFTs made on polyimide foil by PE-CVD at 150°C," Mat. Res. Symp. Proceedings, vol.508, pp.73-78, Materials Research Society, Pennsylvania, 1998.
3. J.N. Sandoe, "AMLCD on plastic substrates," Proc. SID 98, pp.293-290, 1998.
4. G.N. Parsons, C.-S. Yang, T.M. Kliein, and L. Smith, "Reaction process for low temperature (<150°C) plasma enhanced deposition of hydrogenated amorphous silicon thin film transistors on transparent plastic substrates," Mat. Res. Symp. Proceedings, vol.508, pp. 19-24, Material Research Society, Pennsylvania, 1998.
5. E. Lewder, M. Muecke, and S. Polach, "Reflective FLCDs and PECVD-generated a-Si-TFTs with plastic substrates," Proc. Asia Display 98, pp.173-177, 1998.
6. M. Ikeda, M. Murooka, M. Higuchi, Y. Taniguchi, and K. Nishimura, "Low resistance anodized Ta/TaNx line TFT- LCD," Proc. IDRC 91 Digest, pp.93-96, 1991.