Characterization of MOS Devices by Scanning Thermal Microscopy (SThM)

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2001, Pages 191-197

  Lee, T H ^a,c   Fiege, G B M ^a   Altes, A ^a   Zimmermann, G ^b   Ng, V ^c   Heiderhoff, R ^a   Phang, J C H ^c   Balk, L J ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

SCANNING CAPACITANCE MICROSCOPES (SCM);

BORON; CAPACITANCE; CHARACTERIZATION; DOPING (ADDITIVES); PHOSPHORUS; SILICON; THERMAL CONDUCTIVITY;

MOS DEVICES;

EID: 1542288265     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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