SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1149-1152

Thermal characterization of power devices by scanning thermal microscopy techniques

(5) Fiege, G B M a Niedernostheide, F J b Schulze, H J b Barthelmess R c Balk, L J a

a UNIVERSITY OF WUPPERTAL (Germany)

b SIEMENS AG (Germany)

c eupec GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DEFECTS; GATES (TRANSISTOR); MICROSCOPIC EXAMINATION; MODULATION; RELIABILITY; SEMICONDUCTOR DIODES; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY;

FAILURE INDUCED HOT SPOTS; FREE WHEELING DIODE; INSULATED GATE BIPOLAR TRANSISTORS; SCANNING THERMAL MICROSCOPY; THERMAL CHARACTERIZATION; THERMAL CONDUCTIVITY MEASUREMENT;

POWER ELECTRONICS;

EID: 0033143167 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(99)00163-8 Document Type: Article

Times cited : (21)

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