Metallic low-temperature resistivity in a 2D electron system over an extended temperature range

Physical Review Letters

Volumn 84, Issue 13, 2000, Pages

  Kravchenko, S V ^a   Klapwijk, T M ^b  

^a NORTHEASTERN UNIVERSITY   (United States)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

2D ELECTRON SYSTEM; CRITICAL DENSITY; METALLIC LOW-TEMPERATURE RESISTIVITY; QUANTUM CORRECTIONS;

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FERMI LEVEL; LOW TEMPERATURE EFFECTS; METAL INSULATOR TRANSITION; MOSFET DEVICES; SILICON;

ELECTRONS;

EID: 17944364809     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.2909     Document Type: Article

References (14)

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12. By choosing this boundary condition we assume that the cutoff temperature at which localization effects become negligible is of the order of 1 K. In reality, it is likely to be higher, and this would lead to even stronger quantum corrections.
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14. We stress that Eq. (6) in Ref. [4] is obtained for a very general case, without assuming any particular mechanism for the possible temperature dependence of pD.