Planar Schottky diodes with low barrier height for microwave detector application

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 1, Issue , 2002, Pages 335-338

  Shashkin, V ^a   Chechenin, Yu ^a   Danil'tsev, V ^a   Khrykin, O ^a   Maslovsky, A ^a   Murel, A ^a   Vaks, V ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES;

COMPUTATIONAL RESULTS; EXPERIMENTAL CHARACTERISTICS; MICROWAVE DETECTORS; NEAR-SURFACE LAYERS; OPTIMUM PARAMETERS; PLANAR SCHOTTKY DIODES; SCHOTTKY BARRIER HEIGHTS; SUCCESSIVE DEPOSITIONS;

DIODES;

EID: 1542275014     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003205     Document Type: Conference Paper

References (7)

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2. S.Sassen, B.Witzigmann, C.Wolk, and H.Brugger, "Barrier Height Engineering on GaAs THz Schottky Diodes by Means of High-Low Doping, InGaAs-and InGaP-Layers", IEEE Trans. Electron Devices, 2000, vol.47, p.24-32.
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5. V.Shashkin, S.Rushworth, V.Daniltsev, A.Murel, Yu.Drozdov, S.Gusev, O.Khrykin, and N.Vostokov, "Microstructure and Properties of Aluminum Contacts Formed on GaAs (100) by Low Pressure Chemical Vapor Deposition with Dimethylethylamine Alane Source" J. Electron. Mater., 2001, vol. 30, p.980-986.
6. V.Ya.Aleshkin, V.M.Daniltsev, A.V.Murel, O.I.Khrykin, and V.I.Shashkin, "Deep states in Silicon doped GaAs", Semiconductors, 1998, vol. 32, pp.659-664.
7. V.L.Vaks, V.M.Daniltsev, A.V.Maslovsky, A.V.Murel, O.I.Khrykin, Y.I.Chechenin, and V.I.Shashkin, "Automated System for the Measurement of Diode Detector Parameters in Millimetre Wavelength Range", 11th Internat.Conf."Microwave & Telecom.Techn.", Crimea, Ukraine, 2001, p.592.