Control of the effective barrier height in Al/n-GaAs epitaxial structures fabricated in a single MOCVD process

Russian Microelectronics

Volumn 26, Issue 1, 1997, Pages 49-52

  Shashkin, V I ^a   Murel', A V ^a   Drozdov, Yu N ^a   Danil'tsev, V M ^a   Khrykin, O I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003414925     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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