Deep states in silicon δ-doped GaAs

Semiconductors

Volumn 32, Issue 6, 1998, Pages 659-664

  Aleshkin, V Ya ^a   Danil'tsev, V M ^a   Murel', A V ^a   Khrykin, O I ^a   Shashkin, V I ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

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EID: 0347088165     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187460     Document Type: Article

References (18)

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