Guidelines for Two-Dimensional Dopant Profiling using SCM

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2000, Pages 521-527

  Born, Axel ^a   Wiesendanger, R ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; ELECTRIC CHARGE; ELECTRIC POTENTIAL; FAILURE ANALYSIS; PROBES; SEMICONDUCTOR DOPING; SENSORS; SIGNAL TO NOISE RATIO;

BIAS VOLTAGES; DOPANT PROFILING; SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR DEVICES;

EID: 1542270761     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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