Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates

Diamond and Related Materials

Volumn 8, Issue 1, 1999, Pages 25-28

  Iller, A ^a   Jantsch, W ^b   Marks, J ^a   Pastuszka, B ^a   Diduszko, R ^a   Sadowski, J ^a  

^a INSTITUTE OF VACUUM TECHNOLOGY   (Poland)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Electrical properties; Gallium nitride (GaN); IR

Indexed keywords

ALUMINUM COMPOUNDS; BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; DIELECTRIC PROPERTIES OF SOLIDS; INFRARED RADIATION; LIGHT REFLECTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHONONS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON WAFERS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; RESTSTRAHLEN BAND;

SEMICONDUCTING FILMS;

ELECTRICAL TECHNIQUE;

EID: 0033028268     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(98)00368-9     Document Type: Article

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