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Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 39-43

Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

(7) Verardi, P a Craciun, F b Dinescu, M c Scarisoreanu, N c Moldovan, A c Purice, A c Galassi, C d

a CNR (Italy)

b ISC CNR (Italy)

c NATIONAL INSTITUTE FOR LASER (Romania)

d INSTITUTE OF SCIENCE AND TECHNOLOGY FOR CERAMICS (Italy)

Author keywords

Dielectric properties; Films; PLZT; PZT

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC PROPERTIES; FREQUENCIES; LEAD COMPOUNDS; NIOBIUM; PERMITTIVITY; PULSED LASER DEPOSITION; RELAXATION PROCESSES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DEPOSITION CHAMBERS; FREQEUNCY RANGES; PLZT; PZT;

LANTHANUM;

EID: 15344344689 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.12.067 Document Type: Conference Paper

Times cited : (9)

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