High precision chemical mechanical polishing of highly-boron-doped Si wafer used for epitaxial substrate

Precision Engineering

Volumn 29, Issue 2, 2005, Pages 151-156

  Watanabe, J ^a,c   Yu, G ^a   Eryu, O ^a   Koshiyama, I ^b   Izumi, K ^a   Nakashima, K ^a   Umeno, M ^a   Jimbo, T ^a   Kodama, K ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b FUJIMI INCORPORATED RandD Center   (Japan)

^c KUMAMOTO UNIVERSITY   (Japan)

Author keywords

Amine system polishing slurry; Chemical mechanical polishing; Harder polishing pad; Highly boron doped Si; Surface waviness

Indexed keywords

BORON; COLLOIDS; CRYSTAL LATTICES; CRYSTALS; DOPING (ADDITIVES); FINISHING; POLISHING; SECONDARY ION MASS SPECTROMETRY; SILICA; SLURRIES; SURFACE ROUGHNESS;

AMINE SYSTEM POLISHING SLURRY; CHEMICAL-MECHANICAL POLISHING; HARDER POLISHING PAD; HIGHLY-BORON-DOPED SI; SURFACE WAVINESS;

SILICON WAFERS;

EID: 15044352926     PISSN: 01416359     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.precisioneng.2004.06.006     Document Type: Article

References (11)

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