Mechanical property characterization of boron-doped silicon by Berkovich-type indenter

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 A, 2001, Pages

  Yu, Guolin ^a   Watanabe, Junji ^a,b   Izumi, Katsutoshi ^a,c   Nakashima, Kenshiro ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b KUMAMOTO UNIVERSITY   (Japan)

^c Osaka Prefecture University   (Japan)

Author keywords

Hardness; High born doped silicon; Nanoindention

Indexed keywords

BORON; DIAMONDS; DOPING (ADDITIVES); HARDNESS; INDENTATION; ION IMPLANTATION; NUMERICAL ANALYSIS; SINGLE CRYSTALS; SURFACE PROPERTIES;

BERKOVICH TYPE INDENTER; BORON DOPED SILICON; NANOINDENTATION;

SILICON;

EID: 0035271847     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l183     Document Type: Letter

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